OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • .
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPA037N08N3 G
Product Summary VDS RDS(on),max ID
IPA037N08N3 G
80 V 3.7 mW 75 A
Package Marking
PG-TO220-FP 037N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drai.
isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA037N08N3G |
Infineon Technologies |
Power-Transistor | |
2 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA030N10N3 |
Infineon |
Power-Transistor | |
4 | IPA030N10N3G |
Infineon Technologies |
Power-Transistor | |
5 | IPA030N10NF2S |
Infineon |
MOSFET | |
6 | IPA032N06N3 |
INCHANGE |
N-Channel MOSFET | |
7 | IPA032N06N3G |
Infineon |
Power-Transistor | |
8 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor | |
9 | IPA029N06N |
Infineon |
MOSFET | |
10 | IPA029N06N |
INCHANGE |
N-Channel MOSFET | |
11 | IPA040N06N |
Infineon |
MOSFET | |
12 | IPA040N06N |
INCHANGE |
N-Channel MOSFET |