IPA030N10N3 |
Part Number | IPA030N10N3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 79 IDM Drain Current-Single Pulsed 316 PD Total Dissipation @TC=25℃ 41 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·... |
Document |
IPA030N10N3 Data Sheet
PDF 251.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPA030N10N3 |
Infineon |
Power-Transistor | |
2 | IPA030N10N3G |
Infineon Technologies |
Power-Transistor | |
3 | IPA030N10NF2S |
Infineon |
MOSFET | |
4 | IPA032N06N3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA032N06N3G |
Infineon |
Power-Transistor |