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Fast Switching Emitter Controlled Diode Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS compliant IDB18E120 Product Summary VRRM 1200 IF VF Tjmax 18 1.65 150 V A V °C PG-TO263-3-2 2 1 3 Type IDB18E120 Package Ordering Code Marking Pin 1 .
r
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- - 1.1 K/W - - 62
- - 62 - 35 -
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Reverse leakage current
VR=1200V, Tj=25°C VR=1200V, Tj=150°C
IR - - 100 - - 1400
Forward voltage drop
IF=18A, Tj=25°C IF=18A, Tj=150°C
VF - 1.65 2.15 - 1.7 -
Unit µA V
1Device on 40mm
*40mm
*1.5mm .
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|---|---|---|---|---|
| 1 | IDB10S60C |
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| 2 | IDB12E120 |
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| 3 | IDB15E60 |
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| 4 | IDB04E120 |
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| 5 | IDB06E60 |
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| 6 | IDB06S60C |
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2nd Generation thinQ SiC Schottky Diode |
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| 7 | IDB09E120 |
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Fast Switching EmCon Diode |
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| 8 | IDB09E60 |
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Fast Switching EmCon Diode |
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| 9 | IDB23E60 |
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| 10 | IDB30E120 |
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Fast Switching Emitter Controlled Diode |
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| 11 | IDB30E60 |
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| 12 | IDB31 |
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