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IDB18E120 |
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| Part Number | IDB18E120 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Fast Switching Emitter Controlled Diode Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS co... |
| Features |
r
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- - 1.1 K/W - - 62
- - 62 - 35 -
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Reverse leakage current
VR=1200V, Tj=25°C VR=1200V, Tj=150°C
IR - - 100 - - 1400
Forward voltage drop
IF=18A, Tj=25°C IF=18A, Tj=150°C
VF - 1.65 2.15 - 1.7 -
Unit µA V
1Device on 40mm*40mm*1.5mm ... |
| Document |
 IDB18E120 Data Sheet
PDF 359.42KB |
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