IDB10S60C - Infineon Technologies

IDB10S60C 2nd Generation thinQ SiC Schottky Diode

IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC .

Features

• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 .