IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target.
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
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Product Summary V DC Qc IF 600 15 6 V nC A
D2PAK
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives Type IDB06S60C Package D2PAK Marking D06S60C Pin 2 C Pin 3 A
Maximum ratings, at T j=25 °C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDB06E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
2 | IDB04E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
3 | IDB09E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
4 | IDB09E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
5 | IDB10S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode | |
6 | IDB12E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
7 | IDB15E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
8 | IDB18E120 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
9 | IDB23E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
10 | IDB30E120 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
11 | IDB30E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
12 | IDB31 |
General Semiconductor |
PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE |