and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
ge 1 2003-07-31 IDP09E60 IDB09E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 2.6 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25°C V R=600V, Tj=150°C Symbol min. IR VF - Values typ. max. Unit µA 1.5 1.5 50 750 V 2 - Forward voltage drop IF=9A, Tj=25°C IF=9A, Tj=15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDB09E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
2 | IDB04E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
3 | IDB06E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
4 | IDB06S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode | |
5 | IDB10S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode | |
6 | IDB12E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
7 | IDB15E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
8 | IDB18E120 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
9 | IDB23E60 |
Infineon Technologies |
Fast Switching EmCon Diode | |
10 | IDB30E120 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
11 | IDB30E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
12 | IDB31 |
General Semiconductor |
PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE |