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Fast Switching Emitter Controlled Diode Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS compliant IDB30E120 Product Summary VRRM 1200 IF VF Tjmax 30 1.65 150 V A V °C PG-TO263-3-2 2 1 3 Type IDB30E120 Package Ordering Code Marking Pin 1 .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IDB30E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |
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| 2 | IDB31 |
General Semiconductor |
PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE |
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| 3 | IDB04E120 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 4 | IDB06E60 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 5 | IDB06S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode |
|
| 6 | IDB09E120 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 7 | IDB09E60 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 8 | IDB10S60C |
Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode |
|
| 9 | IDB12E120 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 10 | IDB15E60 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 11 | IDB18E120 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |
|
| 12 | IDB23E60 |
Infineon Technologies |
Fast Switching EmCon Diode |
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