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IDB10S60C |
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| Part Number | IDB10S60C |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No t... |
| Features |
• Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 ... |
| Document |
 IDB10S60C Data Sheet
PDF 320.51KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IDB12E120 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 2 | IDB15E60 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 3 | IDB18E120 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |
|
| 4 | IDB04E120 |
Infineon Technologies |
Fast Switching EmCon Diode |
|
| 5 | IDB06E60 |
Infineon Technologies |
Fast Switching EmCon Diode |
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