HY27UF162G2M - Hynix Semiconductor

HY27UF162G2M (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory

table 2) Edit Data Protection texts 3) Add Read ID table 4) Add Marking Information 5) Add Application note 6) Change AC characteristics tCLS tCLH 0.1 Before After 10 0 5 10 tCS 15 0 tCH 5 10 tWP tALS 15 25 10 0 tDS 10 20 tDH 5 10 May. 23. 2005 Preliminary History Draft Date Dec. 2004 Remark Preliminary tWC tWH Before After 30 50 10 15 tRP 15 25 tRC 30.

Features

2) Change DC characteristics (Table 9) - Operating Current ICC1 Typ 0.3 Before After 20 15 Max 40 30 ICC2 Typ 20 15 Max 40 30 ICC3 Typ 20 15 Max 40 30 Aug. 19. 2005 Preliminary 3) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100 Rev 0.3 / Aug. 2005 2 Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE - .