HY27UF082G2B - Hynix Semiconductor

HY27UF082G2B 2Gb NAND FLASH

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / Jan. 2008 1 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash Document Title 2Gbit (256Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Add ULGA Package. 0.1 - Figures .

Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8/x16 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 2048 blocks - x16 : (1K + 32) words x 64 pages x 2048 blocks PAGE SIZE - (2K + 64 spare) Bytes - (1K + 32 spare) Words BLOCK SIZE - (128K + 4K.