HY27UF164G2B - Hynix Semiconductor

HY27UF164G2B 4Gbit (512Mx8bit) NAND Flash

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Jan. 2008 1 1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash Document Title 4Gbit (512Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Correct Cache Read 2) Correct Va.

Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8/x16 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 4096 blocks - x16 : (1K + 32) words x 64 pages x 4096 blocks PAGE SIZE - (2K + 64 spare) Bytes - (1K + 32 spare) Words BLOCK SIZE - (128K + 4K.