HY27UF084G2M - Hynix Semiconductor

HY27UF084G2M 4Gbit (512K x 8-Bit) NAND Flash

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3/ Nov. 2005 1 www.DataSheet4U.com www.DataSheet4U.com Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Document Title 4Gbit (512Mx8bit) NAND Flash Memory Revision History Revision No. 0.0 Init.

Features

Rev. 0.3 / Nov. 2005 2 Preliminary HY27UF084G2M Series 4Gbit (512Mx8bit) NAND Flash Revision History Revision No. 1) Change AC Characteristics tR Before After 20 25 tCLS 0.2 Before After 12 15 tAR 10 15 tWP 12 15 tDS 12 15 tREA 18 20 tWC 25 30 tRHZ 30 50 tADL 70 100 tCHZ 30 50 tRP 12 15 tCEA 25 35 tRC 25 30 Oct. 08. 2005 Preliminary -Continued- History Draft Date Remark 2) Add tCRRH (100ns, Min) - tCRRH : Cache Read RE# High 3) Change 3rd Read ID - 3rd Read ID is changed to 80h - 3rd Byte of Device Identifier Table is added. 4) Change NOP - Number of partial Program Cycle in the same .