HY27UF081G2A - Hynix Semiconductor

HY27UF081G2A 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Jun. 2007 1 www.DataSheet.in HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.01 Initial D.

Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle: Manufacturer Code - 2nd cycle: Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27UFxx1G2A Memory Cell Array = (2K+64) Bytes x 64 Pages x 1,024 Blocks = (1K+32) Bytes x 64 Pages x 1,024 Blocks PAGE SIZE - x8 device : (2K+64 spare) Bytes : HY27UF081G2A - x16 device : (1K+32 spare) Bytes : HY27UF.