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HY27UF162G2M |
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| Part Number | HY27UF162G2M |
| Manufacturer | Hynix Semiconductor |
| Description | table 2) Edit Data Protection texts 3) Add Read ID table 4) Add Marking Information 5) Add Application note 6) Change AC characteristics tCLS tCLH 0.1 Before After 10 0 5 10 tCS 15 0 tCH 5 10 tWP tALS... |
| Features |
2) Change DC characteristics (Table 9) - Operating Current ICC1 Typ 0.3 Before After 20 15 Max 40 30 ICC2 Typ 20 15 Max 40 30 ICC3 Typ 20 15 Max 40 30 Aug. 19. 2005 Preliminary
3) Correct PKG dimension (TSOP PKG) CP Before After 0.050 0.100
Rev 0.3 / Aug. 2005
2
Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE - ... |
| Document |
 HY27UF162G2M Data Sheet
PDF 500.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27UF162G2A |
Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash |
|
| 2 | HY27UF162G2B |
Hynix Semiconductor |
2Gb NAND FLASH |
|
| 3 | HY27UF161G2A |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
|
| 4 | HY27UF161G2M |
Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory |
|
| 5 | HY27UF164G2B |
Hynix Semiconductor |
4Gbit (512Mx8bit) NAND Flash |
|