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HY27UF081G2A |
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| Part Number | HY27UF081G2A |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Jun. 2007 1 www.DataSheet.in HY27UF(08/16)1... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle: Manufacturer Code - 2nd cycle: Device Code SUPPLY VOLTAGE - VCC = 2.7 to 3.6V : HY27UFxx1G2A Memory Cell Array = (2K+64) Bytes x 64 Pages x 1,024 Blocks = (1K+32) Bytes x 64 Pages x 1,024 Blocks PAGE SIZE - x8 device : (2K+64 spare) Bytes : HY27UF081G2A - x16 device : (1K+32 spare) Bytes : HY27UF... |
| Document |
 HY27UF081G2A Data Sheet
PDF 435.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27UF081G2M |
Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory |
|
| 2 | HY27UF082G2A |
Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash |
|
| 3 | HY27UF082G2B |
Hynix Semiconductor |
2Gb NAND FLASH |
|
| 4 | HY27UF082G2M |
Hynix Semiconductor |
(HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory |
|
| 5 | HY27UF084G2B |
Hynix Semiconductor |
4Gbit (512Mx8bit) NAND Flash |
|