HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords .
l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications: CRT、TV/Monitor and Lighting. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM64 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
2 | HM6400 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | HM6401 |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
4 | HM6408 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
5 | HM6409 |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
6 | HM64YLB36514 |
Renesas Technology |
16M Synchronous Late Write Fast Static RAM | |
7 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
8 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
9 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
10 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
11 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
12 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor |