HM6401 - H&M Semiconductor

HM6401 P-Channel Enhancement Mode Power MOSFET

The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.0A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V ● High Power and current ha.

Features

● VDS = -30V,ID = -5.0A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application
●PWM applications
●Load switch
●Power management SOT-23-L top view Package Marking And Ordering Information Device Marking Device Device Package 6401 HM6401 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage .