HM6409 - H&M Semiconductor

HM6409 P-Channel Enhancement Mode Power MOSFET

The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free.

Features

● VDS = -20V,ID = -5.0A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch
● Power management HM6409 D G S Schematic diagram Marking and pin Assignment SOT-23-L top view Package Marking and Ordering Information Device Marking Device Device Package 6409 HM6409 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Vo.