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HM640 |
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| Part Number | HM640 |
| Manufacturer | H&M Semiconductor |
| Description | HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy... |
| Features |
l Fast Switching
l Low ON Resistance(Rdson≤0.18Ω)
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications：
CRT、TV/Monitor and Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Re... |
| Document |
 HM640 Data Sheet
PDF 923.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM64 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HM6400 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | HM6401 |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | HM6408 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | HM6409 |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|