The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer .
• 2.5 V ± 5% operation and 1.5 V (VDDQ)
• 16M bit density
• Internal self-timed late write
• Byte write control (4 byte write selects, one for each 9-bit)
• Optional ×18 configuration
• HSTL compatible I/O
• Programmable impedance output drivers
• Differential pseudo-HSTL clock inputs
• Asynchronous G output control
• Asynchronous sleep mode
• FC-BGA 119pin package with SRAM JEDEC standard pinout
• Limited set of boundary scan JTAG IEEE 1149.1 compatible
• Protocol: Single differential clock register-latch mode
Preliminary: The specifications of this device are subject to change without notic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM64 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
2 | HM640 |
H&M Semiconductor |
N-channel Enhanced VDMOSFET | |
3 | HM6400 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | HM6401 |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
5 | HM6408 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
6 | HM6409 |
H&M Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
7 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
8 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
9 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
10 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
11 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
12 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor |