HM6408 - H&M Semiconductor

HM6408 N-Channel Enhancement Mode Power MOSFET

The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 5.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V ● High power and current handing capabil.

Features

● VDS = 20V,ID = 5.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
●Battery protection
●Load switch
●Power management D G S Schematic diagram Marking and pin Assignment SOT-23-L top view Package Marking and Ordering Information Device Marking Device Device Package 6408 HM6408 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS .