HM62W8511HC - Hitachi Semiconductor

HM62W8511HC 4M High Speed SRAM (512-kword x 8-bit)

The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and bu.

Features

• Single supply : 3.3 V ± 0.3 V
• Access time : 10 ns (max)
• Completely static memory  No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible  All inputs and outputs
• Operating current : 115 mA (max)
• TTL standby current : 40 mA (max)
• CMOS standby current : 5 mA (max) : 1 mA (max) (L-version)
• Data retension current : 0.6 mA (max) (L-version)
• Data retension voltage : 2 V (min) (L-version)
• Center VCC and VSS type pinout Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales.