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The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62W8512B is suitable for batte.
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 55/70 ns (max)
• Power dissipation Active: 16.5 mW/MHz (typ) Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
HM62W8512B Series
Ordering Information
Type No. HM62W8512BLFP-5 HM62W8512BLFP-7 Access time 55 ns 70 ns Package 525-mil 32-pin plastic SOP (FP-32D)
HM62W8512BLFP-5SL 55 ns HM62W8512BLFP-7SL 70 ns HM62W8512BLFP-5UL 55 ns HM62W8512BLFP-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM62W8512BI |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
|
| 2 | HM62W8511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 3 | HM62W8511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 4 | HM62W8511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 5 | HM62W1400H |
Hitachi Semiconductor |
4M High Speed SRAM |
|
| 6 | HM62W16255H |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 7 | HM62W16255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 8 | HM62W16255HI |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 9 | HM62W16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 10 | HM62W16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 11 | HM62W16258BI |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 12 | HM62W4100H |
Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
|