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The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32.
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 70/85 ns (max)
• Power dissipation Active: 16.5 mW/MHz (typ) Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature:
–40 to +85˚C
Ordering Information
Type No. HM62W8512BLTTI-7 HM62W8512BLTTI-8 Access time 70 ns 85 ns Package 400-mil 32-pin plastic TSOP II (TTP-32D)
HM62W8512BI Series
Pin Arrangement
32-pin TSOPII (Normal Typ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM62W8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
|
| 2 | HM62W8511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 3 | HM62W8511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 4 | HM62W8511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 5 | HM62W1400H |
Hitachi Semiconductor |
4M High Speed SRAM |
|
| 6 | HM62W16255H |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 7 | HM62W16255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 8 | HM62W16255HI |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 9 | HM62W16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 10 | HM62W16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 11 | HM62W16258BI |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 12 | HM62W4100H |
Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
|