The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, s.
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 15 ns (max)
• Completely static memory No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible All inputs and outputs
• Operating current: 160 mA (max)
• TTL standby current: 50 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range:
–40 to 85°C
HM62W16255HI Series
Ordering Information
Type No. HM62W16255HJPI-15 HM62W16255HTTI-15 Access time 15 ns 15 ns Package 400-mil 44-pin plastic SOJ (CP-44D) 400-mil 44-pin plastic TSOPII (TTP-44DE)
Pin Arrangement
HM62W162.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM62W16255H |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) | |
2 | HM62W16255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) | |
3 | HM62W16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
4 | HM62W16258B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
5 | HM62W16258BI |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) | |
6 | HM62W1400H |
Hitachi Semiconductor |
4M High Speed SRAM | |
7 | HM62W4100H |
Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) | |
8 | HM62W4100HC |
Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) | |
9 | HM62W8511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
10 | HM62W8511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
11 | HM62W8511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) | |
12 | HM62W8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |