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The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plasti.
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• Single 3.3 V supply: 3.3 V ± 0.3 V Fast access time: 55 ns/70 ns (max) Power dissipation: Active: 9.9 mW (typ) Standby: 3.3 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation.
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HM62W16258B Series
Ordering Information
Type No. HM62W16258BLTT-5 HM62W16258BLTT-7 HM62W16258BLTT-5SL HM62W16258BLTT-7SL Access time 55 ns 70 ns 55 ns 70 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
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HM62W16258B Series
Pin Arrangement
44-pin TSOP A4.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM62W16258BI |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 2 | HM62W16255H |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 3 | HM62W16255HC |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 4 | HM62W16255HI |
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) |
|
| 5 | HM62W16256B |
Hitachi Semiconductor |
4 M SRAM (256-kword x 16-bit) |
|
| 6 | HM62W1400H |
Hitachi Semiconductor |
4M High Speed SRAM |
|
| 7 | HM62W4100H |
Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
|
| 8 | HM62W4100HC |
Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
|
| 9 | HM62W8511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
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| 10 | HM62W8511HC |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
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| 11 | HM62W8511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 12 | HM62W8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
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