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HM62W8511HC |
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| Part Number | HM62W8511HC |
| Manufacturer | Hitachi Semiconductor |
| Description | The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit design... |
| Features |
• Single supply : 3.3 V ± 0.3 V • Access time : 10 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current : 115 mA (max) • TTL standby current : 40 mA (max) • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version) • Data retension current : 0.6 mA (max) (L-version) • Data retension voltage : 2 V (min) (L-version) • Center VCC and VSS type pinout Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales... |
| Document |
 HM62W8511HC Data Sheet
PDF 66.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM62W8511H |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 2 | HM62W8511HI |
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) |
|
| 3 | HM62W8512B |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
|
| 4 | HM62W8512BI |
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) |
|
| 5 | HM62W1400H |
Hitachi Semiconductor |
4M High Speed SRAM |
|