HAT2285WP - Renesas Technology

HAT2285WP Silicon N-Channel Power MOSFET

Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0310 Rev.3.10 May 13, 2010 Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4.

Features

 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
 Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4 32 1 78 D1 D1 56 S1/D2 S1/D2 4 G2 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. P.