HAT2282C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 Jan 26, 2006 23 45 DD DD 6 G S 1 1. Source 2. Dr.
• Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V)
• Low drive current
• High density mounting
• 2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Indexband 6
5
4
3 2 1
REJ03G1329-0100 Rev.1.00
Jan 26, 2006
23 45 DD DD
6 G
S 1
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
VDSS
Gate to Source voltage
VGSS
Drain current Drain peak current
ID
ID
Note1 (pulse)
Body - Drain diode reverse Drain current Channel dissipation
IDR Pch Note2
Channel temperature
Tch
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HAT2281C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
2 | HAT2285WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
3 | HAT2287WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
4 | HAT2200R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
5 | HAT2200WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
6 | HAT2201R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
7 | HAT2201WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
8 | HAT2202C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
9 | HAT2203C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
10 | HAT2204C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
11 | HAT2205C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
12 | HAT2206C |
Renesas Technology |
Silicon N-Channel Power MOSFET |