H7N1004LD - Renesas Technology

H7N1004LD (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching

www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) Rev.6.00 Aug.27.2003 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate .

Features

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• Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 of 11 H7N1004LD, H7N1004LS, H7N1004LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Tch T.