H7N1004LD |
Part Number | H7N1004LD |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) Rev.6.00 Aug.27.2003 Features • • • • Low on-resi... |
Features |
• • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 of 11 H7N1004LD, H7N1004LS, H7N1004LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Tch T... |
Document |
H7N1004LD Data Sheet
PDF 137.13KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | H7N1004LM |
Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching | |
2 | H7N1004LS |
Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching | |
3 | H7N1004AB |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | H7N1004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | H7N1004DS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |