H7N1004DL - Renesas Technology

H7N1004DL Silicon N Channel MOS FET High Speed Power Switching

H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) = 25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-.

Features

• Low on-resistance RDS(on) = 25 mΩ typ. www.DataSheet4U.com
• Low drive current
• Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S)) D 1 2 3 G 1. Gate 2. Drain 3. Source H7N0607DS 1 2 3 S H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty c.