H7N1004FM - Renesas Technology

H7N1004FM Silicon N Channel MOS FET High Speed Power Switching

H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 www.DataSheet4U.com Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004F.

Features

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• Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.5 25 150
  –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel diss.