H7N1002LD - Renesas Technology

H7N1002LD Silicon N Channel MOS FET High Speed Power Switching

H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 Features www.DataSheet4U.com R • Low on-resistance DS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2..

Features

www.DataSheet4U.com R
• Low on-resistance DS (on) = 8 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N1002LD H7N1002LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N1002LM Rev.7.00 Apr 07, 2006 page 1 of 8 H7N1002LD, H7N1002LS, H7N1002LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curre.