H7N1004AB - Renesas Technology

H7N1004AB Silicon N Channel MOS FET High Speed Power Switching

H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute.

Features

• Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com
• Low drive current
• Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Symbol VD.