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H7N1004AB |
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| Part Number | H7N1004AB |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com • Low drive current • Availa... |
| Features |
• Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Symbol VD... |
| Document |
 H7N1004AB Data Sheet
PDF 144.77KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H7N1004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 2 | H7N1004DS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H7N1004FM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H7N1004FN |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H7N1004LD |
Renesas Technology |
(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching |
|