GB20V60DF - STMicroelectronics

GB20V60DF IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver.

Features

• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
• Lead free package Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of.