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GB20V60DF |
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| Part Number | GB20V60DF |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between condu... |
| Features |
• Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode • Lead free package Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of... |
| Document |
 GB20V60DF Data Sheet
PDF 2.01MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | GB200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 3 | GB200TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|
| 4 | GB201 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 5 | GB201A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|