Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS.
TINGS
Symbol VCES VECR VGE IC IC ICM ( ) Eas Ptot ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4
–65 to 175 175 Unit V V V A A A
mJ
W W/°C KV °C °C
(
•)Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Rth.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB20NB32LZ |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT | |
2 | GB20NC60V |
STMicroelectronics |
very fast IGBT | |
3 | GB200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
4 | GB200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | GB200TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
6 | GB201 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
7 | GB201A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
8 | GB20B60PD1 |
International Rectifier |
IRGB20B60PD1 | |
9 | GB20SLT12-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
10 | GB20V60DF |
STMicroelectronics |
IGBT | |
11 | GB25MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
12 | GB25RF120K |
International Rectifier |
IGBT PIM MODULE |