GA200-GA201A High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Repe.
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Repetitive peak off state voltage Repetitive peak on state current DC on state current 70°C ambient 70°C case Peak gate current Average gate current Reverse gate current Reverse gate voltage Thermal resistance Storage temperature range Operating temperature range
Symbol
VDRM ITRM
IT
IGM IG(AV) IGR VGR RӨCA Tstg
TJ
GA200 GA200A
60V
GA201 GA201A
100V
GB200 GB200A
60.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
2 | GB200TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
3 | GB201 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
4 | GB201A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | GB20B60PD1 |
International Rectifier |
IRGB20B60PD1 | |
6 | GB20NB32LZ |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT | |
7 | GB20NB32LZ-1 |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT | |
8 | GB20NC60V |
STMicroelectronics |
very fast IGBT | |
9 | GB20SLT12-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
10 | GB20V60DF |
STMicroelectronics |
IGBT | |
11 | GB25MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
12 | GB25RF120K |
International Rectifier |
IGBT PIM MODULE |