This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Order codes STGB20NC60V STGP20NC60V STGW20NC60V Table 1. Device summary Marking Package GB20NC60V D²PAK GP20NC60V GW20NC60V TO-220 TO-247 Packaging Tape and reel Tube Tube June 2015 This is information on a.
• High frequency operation up to 50 kHz
• Lower CRES / CIES ratio (no cross-conduction
susceptibility)
• High current capability
Applications
• High frequency inverters
• UPS, motor drivers
• HF, SMPS and PFC in both hard switch and
resonant topologies
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Order codes STGB20NC60V STGP20NC60V STGW20NC60V
Table 1. Device summary
Marking
Package
GB20NC60V
D²PAK
GP20NC60V GW20NC60V
TO-220 TO-247
Packaging Tape and reel
Tube Tube
June 2015.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB20NB32LZ |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT | |
2 | GB20NB32LZ-1 |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT | |
3 | GB200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
4 | GB200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
5 | GB200TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
6 | GB201 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
7 | GB201A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
8 | GB20B60PD1 |
International Rectifier |
IRGB20B60PD1 | |
9 | GB20SLT12-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
10 | GB20V60DF |
STMicroelectronics |
IGBT | |
11 | GB25MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
12 | GB25RF120K |
International Rectifier |
IGBT PIM MODULE |