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GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast S.
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
• Extremely Fast Switching Speeds
VRRM IF (Tc = 135°C) QC
Package
Case
Case K
A K TO-247-2
A
= 1200 V = 32 A = 47 nC
Advantages
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
•.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GB200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | GB200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 3 | GB200TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|
| 4 | GB201 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 5 | GB201A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 6 | GB20B60PD1 |
International Rectifier |
IRGB20B60PD1 |
|
| 7 | GB20NB32LZ |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT |
|
| 8 | GB20NB32LZ-1 |
ST Microelectronics |
N-CHANNEL PowerMESH TM IGBT |
|
| 9 | GB20NC60V |
STMicroelectronics |
very fast IGBT |
|
| 10 | GB20V60DF |
STMicroelectronics |
IGBT |
|
| 11 | GB25MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode |
|
| 12 | GB25RF120K |
International Rectifier |
IGBT PIM MODULE |
|