GB15B60KD - International Rectifier

GB15B60KD IRGB15B60KD

PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive.

Features

• Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB15B60KD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC.