www.DataSheet.co.kr GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC MTP • Very low stra.
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED® diode with ultrasoft reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
MTP
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
PRODUCT SUMMARY
VCES VCE(on) typical at VGE = 15 V IC at TC = 100 °C tsc at TJ = 150 °C 1200 V 2.51 V 15 A > 10 μs
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB150TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
2 | GB15B60KD |
International Rectifier |
IRGB15B60KD | |
3 | GB15RF120K |
International Rectifier |
IGBT PIM MODULE | |
4 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor | |
5 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
6 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | GB10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
8 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
9 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT | |
10 | GB10NB60S |
STMicroelectronics |
low drop IGBT | |
11 | GB10NC60HD |
STMicroelectronics |
very fast IGBT | |
12 | GB10NC60K |
STMicroelectronics |
short-circuit rugged IGBT |