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GB15B60KD |
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| Part Number | GB15B60KD |
| Manufacturer | International Rectifier |
| Description | PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB15B60KD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC... |
| Document |
 GB15B60KD Data Sheet
PDF 373.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB150TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|
| 2 | GB15RF120K |
International Rectifier |
IGBT PIM MODULE |
|
| 3 | GB15XP120KTPBF |
Vishay Siliconix |
Three Phase Inverter Module |
|
| 4 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
|
| 5 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|