FNK4620 - FNK

FNK4620 Complementary Enhancement Mode Field Effect Transistor

The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) To.

Features

n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM 7.2 6.2 64 Power Dissipation F Avalanche Current B TA=25°C TA=70°C Repetitive avalanche energy 0.3mH B .