FNK4610 - FNK

FNK4610 N-Channel Power MOSFET

The FNK4610 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK4610 General Features ● VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V (Typ:8.6mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully charac.

Features

● VDS = 100V,ID =73A RDS(ON) < 12.2m Ω @ VGS=10V (Typ:8.6mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK4610 FNK4610 TO-220 Reel Size - Tape width - Abs.