FNK4310 - FNK

FNK4310 N-Channel Power MOSFET

The FNK4310 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =140A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.6mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and unifo.

Features

● VDS =100V,ID =140A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.6mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK4310 FNK4310 TO-220 Reel Size - Tape width - Quant.