The FNK4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Features VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 11.3mΩ (VGS = 10V) RDS(ON) < 14.3m Ω (VGS = 4.5V) SD SD SD GD SOIC-8 D SOP-8 top view G S Absolute.
VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 11.3mΩ (VGS = 10V) RDS(ON) < 14.3m Ω (VGS = 4.5V) SD SD SD GD SOIC-8 D SOP-8 top view G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.3mH ID IDM IAV EAV Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 12 10 120 30 135 3 2.1 -55 to 150 Thermal Characteristics Parameter Maximum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK4402 |
FNK |
N-Channel Power MOSFET | |
2 | FNK4407 |
FNK |
P-Channel Power MOSFET | |
3 | FNK4407A |
FNK |
P-Channel Power MOSFET | |
4 | FNK4420 |
FNK |
N-Channel Power MOSFET | |
5 | FNK4421 |
FNK |
P-Channel Power MOSFET | |
6 | FNK4435 |
FNK |
P-Channel Power MOSFET | |
7 | FNK4040PD |
FNK |
P-Channel Power MOSFET | |
8 | FNK4080K |
FNK |
N-Channel Power MOSFET | |
9 | FNK4310 |
FNK |
N-Channel Power MOSFET | |
10 | FNK4610 |
FNK |
N-Channel Power MOSFET | |
11 | FNK4610D |
FNK |
N-Channel Power MOSFET | |
12 | FNK4620 |
FNK |
Complementary Enhancement Mode Field Effect Transistor |